ECE Associate Professor and member of the Florida Semiconductor Institute Hamed Dalir was elected as a Fellow of the International Association of Advanced Materials (IAAM) in recognition of his outstanding contributions in the field of nanomaterials science and technology with dedication to indium thin oxide (ITO) and graphene for high-speed applications.
“While silicon photonics faces challenges due to its larger size compared to advanced CMOS N5 technology, integrating ITO into these systems will significantly enhance their potential for future application-specific photonic integrated circuits and high-speed free-space applications.”
– Dr. Hamed Dalir
IAAM is a well-known non-profit worldwide scientific research organization founded in 2010 and located in Sweden. Its objective is to provide a high-level academic platform for the rapid development of breakthrough materials science, engineering, and technology. The IAAM routinely hosts worldwide academic conferences, such as the World Conference on Advanced Materials and Advanced Materials Conferences, throughout Europe, the United States, and Asia. IAAM brings together the world’s top experts in materials science and technology, and it has evolved to be a powerful worldwide academic organization with over 10,000 members from 125 countries. Being designated a Fellow of IAAM is a high distinction bestowed to academics and scientists in appreciation of their outstanding achievements and devotion to the advanced materials community.