“Fundamental Modeling and Simulation of a GaN-based HEMT pH sensor”
Madeline Sciullo
Thursday, March 29, 11:45 a.m.
Larsen 310

Abstract

GaN-based High Electron Mobility Transistors (HEMT)s are most commonly used for power- electronic applications in the commercial sector due to their high-energy bandgap. However, one key advantage of AlGaN is its relatively less reactive surface to fouling which allows these devices to also be great candidates for chemical and biological sensing applications in the research setting. To make HEMT-based sensors commercially viable, better understanding of the sensing mechanism and physical parameters that control it is needed. This work investigates device performance of a GaN HEMT for pH biosensing applications via physics-based modeling and simulation. Previous findings of the first two-dimensional simulation of this device show interesting gate length dependence as preliminary, yet, unfinished results. Current work implements potential-dependent surface reactions to build a more sophisticated model of the semiconductor/electrolyte interface.

Biography

Madeline (Maddie) Sciullo is a 4th year Ph.D. Candidate in Electrical and Computer Engineering at the University of Florida. Her research uses a device and process simulator developed by Dr. Mark Law called Florida Object Oriented Device/Process Simulator (FLOOD/FLOOPS). She has contributed to three major projects including: implementation of sophisticated carrier distribution models for AlGaN/GaN High Electron Mobility Transistors (HEMTs), mechanical stress effects on Silicon-based Hall magnetic sensors, and pH chemical/biological sensors on open-gated GaN-based HEMTs. She has had four internships at General Electric (GE) Energy, Piper Aircraft Inc., Intel Corporation, and Texas Instruments. Maddie plans to graduate in August 2018 and is pursuing postdoctoral opportunities at National Laboratories.